Ultrafast, highly-sensitive infrared photodetectors based on two-dimensional oxyselenide crystals
Abstract
Infrared detection and sensing is deeply embedded in modern technology and human society and its development has always been benefitting from the discovery of new photoelectric response materials. The rise of two-dimensional (2D) materials, thanks to their distinct electronic structure, extreme dimensional confinement and strong light-matter interactions, provides new material platform for next-generation infrared photodetection. Ideal infrared detectors should have fast respond, high sensitivity and air-stability, which is rare to meet at the same time for all existing 2D materials, either graphene, transition metal dichalcogenide or black phosphorous. Herein we demonstrate a new infrared photodetector based on 2D Bi2O2Se crystals, whose main characteristics are superb in the whole 2D family: high sensitivity of ~65 A/W at 1200 nm and ultrafast intrinsic photoresponse of ~1 ps at room temperature. Such great performance is attributed to the suitable electronic bandgap and high carrier mobility of 2D oxyselenide. With additional merits of mass production, excellent stability and flexibility, 2D oxyselenide detectors should open new avenues in highly-sensitive, high-speed, low-cost, flexible infrared photodetection and imaging.
Keywords
Cite
@article{arxiv.1712.05942,
title = {Ultrafast, highly-sensitive infrared photodetectors based on two-dimensional oxyselenide crystals},
author = {Jianbo Yin and Zhenjun Tan and Hao Hong and Jinxiong Wu and Hongtao Yuan and Yujing Liu and Cheng Chen and Congwei Tan and Fengrui Yao and Yulin Chen and Zhongfan Liu and Kaihui Liu and Hailin Peng},
journal= {arXiv preprint arXiv:1712.05942},
year = {2018}
}