Tunneling current induced phonon generation in nanostructures
Mesoscale and Nanoscale Physics
2007-05-23 v1
Abstract
We analyze generation of phonons in tunneling structures with two electron states coupled by electron-phonon interaction. The conditions of strong vibration excitations are determined and dependence of non-equilibrium phonon occupation numbers on the applied bias is found. For high vibration excitation levels self consistent theory for the tunneling transport is presented.
Cite
@article{arxiv.cond-mat/0607304,
title = {Tunneling current induced phonon generation in nanostructures},
author = {P. I. Arseyev and N. S. Maslova},
journal= {arXiv preprint arXiv:cond-mat/0607304},
year = {2007}
}
Comments
11 pages, 6 figures