Tunnel-rate controlled local heat distribution in mesoscopic circuits

Solid-state quantum technologies, including qubits and quantum metrology circuits, demand milli-Kelvin operation to preserve fragile quantum states from classical noise. While the negligible electron-phonon coupling is the major impediment, reaching 50 mK electron temperature is further suffered by the high electrical resistance and sub-micron-scale dimensions of typical devices, limiting conventional heat dissipation. Though the phonons are effectively frozen, thermoelectric techniques could offer a viable path for heat management.This work explores thermally driven electrical transport in a gated quantum dot (QD) on a GaAs-AlGaAs two-dimensional electron gas (2DEG), to control heat flow between the source and drain reservoirs.By exploiting the QD's discrete energy spectrum and tuneable tunnel rates, a precise control over the polarity and magnitude of the resulting thermoelectric current is demonstrated. A temperature difference of 650 mK is maintained across the QD, a separation of 400 nm, by tuning the tunnel-rates. An experimental gate pulsing method is also introduced to directly measure the electron temperature differences across the QD, bypassing the need for any theoretical fits. The results presented here show that tuneable tunnel barriers can be used for local heat control, and could lead to advanced quantum refrigerators that work efficiently in mesoscopic circuits.