4d transition metal perovskite oxides serve as suitable testbeds for the study of strongly correlated metallic properties. Among these, SrMoO3 (SMO) exhibits remarkable electrical conductivity at room temperature. The temperature-dependent resistivity (ρ(T)) exhibits a Fermi-liquid behavior below the transition temperature T∗, reflecting the dominant electron-electron interaction. Above T∗, electron-phonon interaction becomes more appreciable. In this study, we employed the power-law scaling of ρ(T) to rigorously determine the T∗. We further demonstrate that the T∗ can be modified substantially by ~40 K in epitaxial thin films. It turns out that the structural quality determines T∗. Whereas the plasma frequency could be tuned by the change in the electron-electron interaction via the effective mass enhancement, we show that the plasmonic properties are more directly governed by the electron-impurity scattering. The facile control of the electron scattering mechanism through structural quality modulation can be useful for plasmonic sensing applications in the visible region.
@article{arxiv.2401.13297,
title = {Tunable electron scattering mechanism in plasmonic SrMoO$_3$ thin films},
author = {Rahma Dhani Prasetiyawati and Seung Gyo Jeong and Chan-Koo Park and Sehwan Song and Sungkyun Park and Tuson Park and Woo Seok Choi},
journal= {arXiv preprint arXiv:2401.13297},
year = {2024}
}