Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by solution-based method shows excellent electrical, optical, and thermal properties. In this work, the chirality of hydrothermally grown 2D Te is identified and analyzed by hot sulfuric acid etching and high-angle tilted high-resolution scanning transmission electron microscopy. The gate-tunable nonlinear electrical responses, including the nonreciprocal electrical transport in the longitudinal direction and the nonlinear planar Hall effect in the transverse direction, are observed in 2D Te under a magnetic field. Moreover, the nonlinear electrical responses have opposite signs in left- and right-handed 2D Te due to the opposite spin polarizations ensured by the chiral symmetry. The fundamental relationship between the spin-orbit coupling and the crystal symmetry in two enantiomers provides a viable platform for realizing chirality-based electronic devices by introducing the chirality degree of freedom into electron transport.
@article{arxiv.2201.08829,
title = {Tunable Chirality-dependent Nonlinear Electrical Responses in 2D Tellurium},
author = {Chang Niu and Gang Qiu and Yixiu Wang and Pukun Tan and Mingyi Wang and Jie Jian and Haiyan Wang and Wenzhuo Wu and Peide D. Ye},
journal= {arXiv preprint arXiv:2201.08829},
year = {2023}
}