Transient-Enhanced Surface Diffusion on Native-Oxide-Covered Si(001) Nano-Structures during Vacuum Annealing

H. Lichtenberger; M. Muehlberger; F. Schaffler

doi:10.1063/1.1577391

Transient-Enhanced Surface Diffusion on Native-Oxide-Covered Si(001) Nano-Structures during Vacuum Annealing

Materials Science 2009-11-10 v1

Authors: H. Lichtenberger , M. Muehlberger , F. Schaffler

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Abstract

We report on the transient-enhanced shape transformation of nano-structured Si(001) surfaces upon in vacuo annealing at relatively low temperatures of 1175K - 1225K for a few minutes. We find dramatic surface mass transport concomitant with the development of low-energy facets on surfaces that are covered by native oxide. The enhanced surface mass transport ceases after the oxide is completely desorbed, and it is also not observed on surfaces where the native oxide had been removed by HF before annealing.

Cite

@article{arxiv.cond-mat/0301074,
  title  = {Transient-Enhanced Surface Diffusion on Native-Oxide-Covered Si(001) Nano-Structures during Vacuum Annealing},
  author = {H. Lichtenberger and M. Muehlberger and F. Schaffler},
  journal= {arXiv preprint arXiv:cond-mat/0301074},
  year   = {2009}
}

Comments

12 pages, 4 figures

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