Transient dual-energy lasing in a semiconductor microcavity
Abstract
We demonstrate sequential lasing at two well-separated energies in a highly photoexcited planar microcavity at room temperature. Two spatially overlapped lasing states with distinct polarization properties appear at energies more than 5 meV apart. Under a circularly polarized nonresonant 2 ps pulse excitation, a sub-10-ps transient circularly polarized high-energy (HE) state emerges within 10 ps after the pulse excitation. This HE state is followed by a pulsed state that lasts for 20--50 ps at a low energy (LE) state. The HE state is highly circularly polarized as a result of a spin-preserving stimulated process, while the LE state shows a significantly reduced circular polarization because of a diminishing spin imbalance.
Cite
@article{arxiv.1504.00078,
title = {Transient dual-energy lasing in a semiconductor microcavity},
author = {Feng-Kuo Hsu and Wei Xie and Yi-Shan Lee and Sheng-Di Lin and Chih-Wei Lai},
journal= {arXiv preprint arXiv:1504.00078},
year = {2015}
}
Comments
5 pages, 4 figures