Towards Faster InP Photonic Crystal All-Optical-Gates
Optics
2015-06-09 v2
Abstract
We demonstrated a two-fold acceleration of the fast time constant characterising the recovery of a P-doped Indium-Phosphide Photonic Crystal all-optical gate. Time-resolved spectral analysis is compared with a three-dimensional drift-diffusion model for the carrier dynamics, demonstrating the transition from the ambipolar to the faster minority carrier dominated diffusion regime. This open the perspective for faster yet efficient nanophotonic all-optical gates.
Keywords
Cite
@article{arxiv.1506.01404,
title = {Towards Faster InP Photonic Crystal All-Optical-Gates},
author = {Gregory Moille and Sylvain Combrié and Kerstin Fuchs and Matusala Yacob and Johann Peter Reithmaier and Alfredo de Rossi},
journal= {arXiv preprint arXiv:1506.01404},
year = {2015}
}
Comments
4 pages, 4 figures