Based on numerically-optimized real-device gates and parameters we study the performance of the phase-flip (repetition) code on a linear array of Gallium Arsenide (GaAs) quantum dots hosting singlet-triplet qubits. We first examine the expected performance of the code using simple error models of circuit-level and phenomenological noise, reporting, for example, a circuit-level depolarizing noise threshold of approximately 3%. We then perform density-matrix simulations using a maximum-likelihood and minimum-weight matching decoder to study the effect of real-device dephasing, read-out error, quasi-static as well as fast gate noise. Considering the trade-off between qubit read-out error and dephasing time (T2) over measurement time, we identify a sub-threshold region for the phase-flip code which lies within experimental reach.
@article{arxiv.2002.05136,
title = {Towards a realistic GaAs-spin qubit device for a classical error-corrected quantum memory},
author = {Manuel Rispler and Pascal Cerfontaine and Veit Langrock and Barbara M. Terhal},
journal= {arXiv preprint arXiv:2002.05136},
year = {2020}
}