Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called "memristor". So, we have used the memristor's direct current (DC) vM--iM characteristic for modeling the UJT's DC current--voltage characteristic. This has led us to confirm on the one hand, that the UJT is a memristor and, on the other hand, to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.
Cite
@article{arxiv.1908.11687,
title = {Torus Breakdown in a Uni Junction Memristor},
author = {Jean-Marc Ginoux and Riccardo Meucci and Stefano Euzzor and Angelo Di Garbo},
journal= {arXiv preprint arXiv:1908.11687},
year = {2019}
}