Topology optimization of a superabsorbing thin-film semiconductor metasurface
Abstract
We demonstrate a computational inverse design method for optimizing broadband-absorbing metasurfaces made of arbitrary dispersive media. Our figure of merit is the time-averaged instantaneous power dissipation in a single unit cell within a periodic array. Its time-domain formulation allows capturing the response of arbitrary dispersive media over any desired spectral range. Employing the time-domain adjoint method within a topology optimization framework enables the design of complex metasurface structures exhibiting unprecedented broadband absorption. We applied the method to a thin-film Silicon-on-insulator configuration and explored the impact of structural and (time-domain inherent) excitation parameters on performance over the visible-ultraviolet. Since our incorporated material model can represent any linear material, the method can also be applied to other all-dielectric, plasmonic, or hybrid configurations.
Keywords
Cite
@article{arxiv.2502.19352,
title = {Topology optimization of a superabsorbing thin-film semiconductor metasurface},
author = {Johannes Gedeon and Izzatjon Allayarov and Emadeldeen Hassan and Antonio Calà Lesina},
journal= {arXiv preprint arXiv:2502.19352},
year = {2025}
}
Comments
This work has been submitted to the IEEE for possible publication