Topologically protected states in $\delta$-doped junctions with band inversion
Abstract
A topological boundary can be formed at the interface between a trivial and a topological insulator. The difference in the topological index across the junction leads to robust gapless surface states. Optical studies of these states are scarce in the literature, the reason being the difficulty to isolate their response from that of the bulk. In this work, we propose to deposit a layer of donor impurities in close proximity to a topological boundary to help detecting gapless surface states. As we will show, gapless surface states are robust against this perturbation and they enhance intraband optical transitions as measured by the oscillator strength. These results allow to understand the interplay of surface and bulk states in topological insulators.
Cite
@article{arxiv.1805.09879,
title = {Topologically protected states in $\delta$-doped junctions with band inversion},
author = {A. Diaz-Fernandez and N. del Valle and E. Diaz and F. Dominguez-Adame},
journal= {arXiv preprint arXiv:1805.09879},
year = {2018}
}