Topologically induced fractional Hall steps in the integer quantum Hall regime of $MoS_2$
Mesoscale and Nanoscale Physics
2016-08-22 v2
Abstract
The quantum magnetotransport properties of a monolayer of molybdenum disulfide are derived using linear response theory. Especially, the effect of topological terms on longitudinal and Hall conductivity is analyzed. The Hall conductivity exhibits fractional steps in the integer quantum Hall regime. Further complete spin and valley polarization of the longitudinal conductivity is seen in presence of these topological terms. Finally, the Shubnikov-de Hass oscillations are suppressed or enhanced contingent on the sign of these topological terms.
Keywords
Cite
@article{arxiv.1604.05007,
title = {Topologically induced fractional Hall steps in the integer quantum Hall regime of $MoS_2$},
author = {SK Firoz Islam and Colin Benjamin},
journal= {arXiv preprint arXiv:1604.05007},
year = {2016}
}
Comments
10 pages, 8 figures, accepted for publication in Nanotechnology (2016)