We report the study of a tri-axial vector magnetoresistance (MR) in nonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%: -1%: 225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications, for example, vector magnetic sensors.
@article{arxiv.1801.01224,
title = {Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices},
author = {Minhao Zhang and Huaiqiang Wang and Kejun Mu and Pengdong Wang and Wei Niu and Shuai Zhang and Guiling Xiao and Yequan Chen and Tong Tong and Dongzhi Fu and Xuefeng Wang and Haijun Zhang and Fengqi Song and Feng Miao and Zhe Sun and Zhengcai Xia and Xinran Wang and Yongbing Xu and Baigeng Wang and Dingyu Xing and Rong Zhang},
journal= {arXiv preprint arXiv:1801.01224},
year = {2018}
}