THz Nanoscopy of Metal and Gallium Implanted Silicon
Optics
2022-11-10 v2 Computational Physics
Abstract
Drude model successfully quantifies the optical constants for bulk matter, but it is not suitable for subwavelength objects. In this paper, terahertz near-field optical microscopy and finite element simulation are used to study gold patches fabricated by Gallium etching. Electron transport is discovered in determining the optical signal strength. The signal from substrate is more complicated and still not fully understood. As the etching area decreases, near-field interaction is not dominated by doping concentration, and a higher signal is observed near connected metals. With the help of simulation, the abnormal enhancement phenomenon is discussed in detail, which lays the foundation for further experimental verification.
Keywords
Cite
@article{arxiv.2210.16745,
title = {THz Nanoscopy of Metal and Gallium Implanted Silicon},
author = {Changlin Wu and Chang Wang and Guanjun You and Juncheng Cao},
journal= {arXiv preprint arXiv:2210.16745},
year = {2022}
}