THz Generation and Detection on Dirac Fermions in Topological Insulators
Mesoscale and Nanoscale Physics
2013-02-06 v1 Materials Science
Abstract
This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved BiSe and Cu-doped BiSe single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption to which Dirac fermions are indispensable. Dirac fermions in BiSe are significantly better absorbers of THz radiation than bulk carriers at room temperature. Moreover, the characteristics of THz emission confirm the existence of a recently proposed surface phonon branch that is normalized by Dirac fermions.
Keywords
Cite
@article{arxiv.1302.1087,
title = {THz Generation and Detection on Dirac Fermions in Topological Insulators},
author = {C. W. Luo and C. C. Lee and H. -J. Chen and C. M. Tu and S. A. Ku and W. Y. Tzeng and T. T. Yeh and M. C. Chiang and H. J. Wang and W. C. Chu and J. -Y. Lin and K. H. Wu and J. Y. Juang and T. Kobayashi and C. -M. Cheng and C. -H. Chen and K. -D. Tsuei and H. Berger and R. Sankar and F. C. Chou and H. D. Yang},
journal= {arXiv preprint arXiv:1302.1087},
year = {2013}
}
Comments
5 pages, 4 figures, 1 table