Threshold switching in solar cells and a no-scribe photovoltaic technology

Victor G. Karpov; Diana Shvydka; Sandip S. Bista

doi:10.1063/5.0066434

Threshold switching in solar cells and a no-scribe photovoltaic technology

Other Condensed Matter 2021-11-24 v3

Authors: Victor G. Karpov , Diana Shvydka , Sandip S. Bista

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Abstract

We show that thin film CdTe solar cells exhibit the phenomenon of threshold switching similar to that in phase change and resistive memory. It creates a conductive filament (shunt) through the solar cell reaching the buried electrode, such as the transparent conductive oxide (TCO) in CdTe based photovoltaics (PV). While in the existing PV the buried electrode was routinely contacted via laser scribe filled metals, our work paves a way to an alternative technology of no-scribe PV.

Keywords

threshold switching thin film cdte solar cells conductive filament buried electrode no-scribe photovoltaic technology

Cite

@article{arxiv.2108.03756,
  title  = {Threshold switching in solar cells and a no-scribe photovoltaic technology},
  author = {Victor G. Karpov and Diana Shvydka and Sandip S. Bista},
  journal= {arXiv preprint arXiv:2108.03756},
  year   = {2021}
}

Comments

5 pages, 7 figures

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