We study resonant tunneling in B-δ-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligible. Our theoretical results are in very good agreement with recent experimental observations of NDR in this type of diodes.
@article{arxiv.cond-mat/9411011,
title = {Thomas-Fermi approach to resonant tunneling in delta-doped diodes},
author = {Enrique Diez and Francisco Dominguez-Adame and Angel Sanchez},
journal= {arXiv preprint arXiv:cond-mat/9411011},
year = {2009}
}