Thickness tunable quantum interference between surface phonon and Dirac plasmon states in thin-films of the topological insulator Bi2Se3

Yuri D. Glinka; Sercan Babakiray; Trent A. Johnson; David Lederman

doi:10.1088/0953-8984/27/5/052203

Thickness tunable quantum interference between surface phonon and Dirac plasmon states in thin-films of the topological insulator Bi2Se3

Mesoscale and Nanoscale Physics 2015-06-23 v1

Authors: Yuri D. Glinka , Sercan Babakiray , Trent A. Johnson , David Lederman

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Abstract

We report on a >100-fold enhancement of Raman responses from Bi2Se3 thin films if laser photon energy switches from 2.33 eV (532 nm) to 1.58 eV (785 nm), which is due to direct optical coupling to Dirac surface states (SS) at the resonance energy of ~1.5 eV (a thickness-independent enhancement) and due to nonlinearly excited Dirac plasmon (a thickness-dependent enhancement). Owing to the direct optical coupling, we observed an in-plane phonon mode of hexagonally arranged Se-atoms associated with a continuous network of Dirac SS. This mode revealed a Fano lineshape for films <15 nm thick, resulting from quantum interference between surface phonon and Dirac plasmon states.

Keywords

topological insulator bi2se3 thin films raman enhancement dirac plasmon surface phonon quantum interference fano lineshape

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@article{arxiv.1501.01849,
  title  = {Thickness tunable quantum interference between surface phonon and Dirac plasmon states in thin-films of the topological insulator Bi2Se3},
  author = {Yuri D. Glinka and Sercan Babakiray and Trent A. Johnson and David Lederman},
  journal= {arXiv preprint arXiv:1501.01849},
  year   = {2015}
}

Thickness tunable quantum interference between surface phonon and Dirac plasmon states in thin-films of the topological insulator Bi2Se3

Abstract

Keywords

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