Thermoelectric properties of junctions between metal and strongly correlated semiconductor
Strongly Correlated Electrons
2009-10-31 v1 Materials Science
Abstract
We propose a junction of metal and rare-earth compound semiconductor as the basis for a possible efficient low-temperature thermoelectric device. If an overlayer of rare earth atoms differing from the bulk is placed at the interface, very high values of the figure of merit ZT can be reached at low temperature. This is due to sharp variation of the transmission coefficient of carriers across the junction at a narrow energy range, which is intrinsically linked to the localized character of the overlayer f-orbital.
Keywords
Cite
@article{arxiv.cond-mat/0009370,
title = {Thermoelectric properties of junctions between metal and strongly correlated semiconductor},
author = {Massimo Rontani and L. J. Sham},
journal= {arXiv preprint arXiv:cond-mat/0009370},
year = {2009}
}
Comments
RevTeX 3.0, 4 pages, 3 postscript figures. To be published in Applied Physics Letters