We report thermodynamic magnetization measurements of a 2-dimensional electron gas for several high mobility Si-MOSFETs. The low-temperature magnetization is shown to be strongly sub-linear function of the magnetic field. The susceptibility determined from the zero-field slope diverges as 1/T^{\alpha}, with \alpha=2.2-2.6 even at high electron densities, in apparent contradiction with the Fermi-liquid picture.
@article{arxiv.0910.5724,
title = {Thermodynamic magnetization of a strongly interacting two-dimensional system},
author = {N. Teneh and A. Yu. Kuntsevich and V. M. Pudalov and T. M. Klapwijk and M. Reznikov},
journal= {arXiv preprint arXiv:0910.5724},
year = {2009}
}