Thermodynamic Limit of Crystal Defects with Finite Temperature Tight Binding
Mathematical Physics
2017-09-12 v2 math.MP
Numerical Analysis
Abstract
We consider a tight binding model for localised crystalline defects with electrons in the canonical ensemble (finite electronic temperature) and nuclei positions relaxed according to the Born--Oppenheimer approximation. We prove that the limit model as the computational domain size grows to infinity is formulated in the grand-canonical ensemble for the electrons. The Fermi-level for the limit model is fixed at a homogeneous crystal level, independent of the defect or electron number in the sequence of finite-domain approximations. We quantify the rates of convergence for the nuclei configuration and for the Fermi-level.
Keywords
Cite
@article{arxiv.1607.06850,
title = {Thermodynamic Limit of Crystal Defects with Finite Temperature Tight Binding},
author = {Huajie Chen and Jianfeng Lu and Christoph Ortner},
journal= {arXiv preprint arXiv:1607.06850},
year = {2017}
}
Comments
2nd version