Thermally activated reorientation of di-interstitial defects in silicon
Materials Science
2009-10-31 v1
Abstract
We propose a di-interstitial model for the P6 center commonly observed in ion implanted silicon. The di-interstitial structure and transition paths between different defect orientations can explain the thermally activated transition of the P6 center from low-temperature C1h to room-temperature D2d symmetry. The activation energy for the defect reorientation determined by ab initio calculations is 0.5 eV in agreement with the experiment. Our di-interstitial model establishes a link between point defects and extended defects, di-interstitials providing the nuclei for the growth.
Keywords
Cite
@article{arxiv.cond-mat/9904031,
title = {Thermally activated reorientation of di-interstitial defects in silicon},
author = {J. Kim and F. Kirchhoff and W. G. Aulbur and J. W. Wilkins and F. S. Khan and G. Kresse},
journal= {arXiv preprint arXiv:cond-mat/9904031},
year = {2009}
}
Comments
12 pages, REVTeX, Four figures, submitted to Phys. Rev. Lett