Theoretical and experimental study on Noise Equivalent Power of X-ray semiconductor ultra-fast response material based on the rad-optic effect
Abstract
Semiconductor material based on the rad-optic effect enables ultra-fast detection of X-rays and plays an important role in fusion diagnostics. Obtaining the accurate noise equivalent power (NEP) of the semiconductor ultrafast response material is the key to detecting X-rays. In this paper, the refractive index change mechanism of the semiconductor under X-ray irradiation was analyzed, and the quantitative relationship between the diffraction efficiency and the X-ray photon energy was established through the LT-AlGaAs diffraction imaging experiments. The impulse responses of LT-AlGaAs under 1 KeV-10 KeV X-ray radiation were calculated, revealing the variation of NEP density with radiated photon energy. In the case of bombarding the Al target to generate 1.5 KeV X-rays, the imaging experiments of LT-AlGaAs were performed. The diffraction image of LT-AlGaAs has a linear relationship with the radiation intensity, and the NEP density of LT-AlGaAs reaches 4.80*105W/cm2. This study has reference significance for the development of ultra-fast X-ray imaging systems based on the rad-optic effect.
Keywords
Cite
@article{arxiv.2206.10890,
title = {Theoretical and experimental study on Noise Equivalent Power of X-ray semiconductor ultra-fast response material based on the rad-optic effect},
author = {Xin Yan and Tao Wang and Gang Wang and Dong Yao and Yiheng Liu and Guilong Gao and Liwei Xin and Fei Yin and Jinshou Tian and Xinlong Chang and Kai He},
journal= {arXiv preprint arXiv:2206.10890},
year = {2022}
}
Comments
19 pages,7 figures