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The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation

Materials Science 2011-09-08 v1 Chemical Physics Optics
Authors: Bilal Gokce , Daniel B. Dougherty , Kenan Gundogdu
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Abstract

Atomic force microscopy and second-harmonic generation data show that boron doping enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the reactivity of the Si-H up bonds than that of the Si-Si back bonds.

Keywords

silicon oxidation p-type doping H-Si(111) second-harmonic generation atomic force microscopy surface reactivity

Cite

@article{arxiv.1109.1486,
  title  = {The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation},
  author = {Bilal Gokce and Daniel B. Dougherty and Kenan Gundogdu},
  journal= {arXiv preprint arXiv:1109.1486},
  year   = {2011}
}

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