Tests of Sapphire Crystals Produced with Different Growth Processes for Ultra-stable Microwave Oscillators
Instrumentation and Detectors
2016-01-20 v1
Abstract
We present the characterization of 8-12 GHz whispering gallery mode resonators machined in high-quality sapphire crystals elaborated with different growth techniques. These microwave resonators are intended to constitute the reference frequency of ultra-stable Cryogenic Sapphire Oscillators. We conducted systematic tests near 4 K on these crystals to determine the unloaded Q-factor and the turnover temperature for whispering gallery modes in the 8-12 GHz frequency range. These characterizations show that high quality sapphire crystals elaborated with the Heat Exchange or the Kyropoulos growth technique are both suitable to meet a fractional frequency stability better than 1x10-15 for 1 s to 10.000 s integration times.
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Cite
@article{arxiv.1504.02711,
title = {Tests of Sapphire Crystals Produced with Different Growth Processes for Ultra-stable Microwave Oscillators},
author = {Vincent Giordano and Christophe Fluhr and Serge Grop and Benoit Dubois},
journal= {arXiv preprint arXiv:1504.02711},
year = {2016}
}
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7 figures