We report resistive switching in voltage biased point contacts (PCs) based on series of van der Waals transition metals tellurides (TMTs) such as MeTe2 (Me=Mo, W) and TaMeTe4 (Me= Ru, Rh, Ir). The switching occurs between a low resistive "metallic-type" state, which is the ground state, and a high resistive "semiconducting-type" state by applying certain bias voltage (<1V), while reverse switching takes place by applying voltage of opposite polarity. The origin of the effect can be formation of domain in PC core by applying a bias voltage, when a strong electric field (about 10kV/cm) modifies the crystal structure and controls its polarization. In addition to the discovery of the switching effect in PCs, we also suggest a simple method of material testing before functionalizing them, which offers a great advantage in finding suitable novel substances. The new functionality of studied TMTs arising from switchable domains in submicron hetero-structures that are promising, e.g., for non-volatile resistive random access memory (RRAM) engineering.
@article{arxiv.2011.01569,
title = {Switchable domains in point contacts based on transition metal tellurides},
author = {Yu. G. Naidyuk and D. L. Bashlakov and O. E. Kvitnitskaya and B. R. Piening and G. Shipunov and D. V. Efremov and S. Aswartham and B. Büchner},
journal= {arXiv preprint arXiv:2011.01569},
year = {2021}
}
Comments
8 pages, 4 figs., supplement with 8 figs. V2 some text revision