Surface state reconstruction in ion-damaged SmB_6

N. Wakeham; Y. Q. Wang; Z. Fisk; F. Ronning; J. D. Thompson

doi:10.1103/PhysRevB.91.085107

Surface state reconstruction in ion-damaged SmB_6

Strongly Correlated Electrons 2015-02-16 v1 Materials Science

Authors: N. Wakeham , Y. Q. Wang , Z. Fisk , F. Ronning , J. D. Thompson

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Abstract

We have used ion-irradiation to damage the (001) surfaces of SmB_6 single crystals to varying depths, and have measured the resistivity as a function of temperature for each depth of damage. We observe a reduction in the residual resistivity with increasing depth of damage. Our data are consistent with a model in which the surface state is not destroyed by the ion-irradiation, but instead the damaged layer is poorly conducting and the initial surface state is reconstructed below the damage. This behavior is consistent with a surface state that is topologically protected.

Keywords

radiation damage in silicon surface science

Cite

@article{arxiv.1502.04103,
  title  = {Surface state reconstruction in ion-damaged SmB_6},
  author = {N. Wakeham and Y. Q. Wang and Z. Fisk and F. Ronning and J. D. Thompson},
  journal= {arXiv preprint arXiv:1502.04103},
  year   = {2015}
}

Comments

5 pages, 3 figures

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