Surface-driven electronic structure in LaFeAsO studied by angle resolved photoemission spectroscopy

Chang Liu; Yongbin Lee; A. D. Palczewski; J. -Q. Yan; Takeshi Kondo; B. N. Harmon; R. W. McCallum; T. A. Lograsso; A. Kaminski

doi:10.1103/PhysRevB.82.075135

Surface-driven electronic structure in LaFeAsO studied by angle resolved photoemission spectroscopy

Superconductivity 2015-05-19 v1

Authors: Chang Liu , Yongbin Lee , A. D. Palczewski , J. -Q. Yan , Takeshi Kondo , B. N. Harmon , R. W. McCallum , T. A. Lograsso , A. Kaminski

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Abstract

We measured the electronic structure of an iron arsenic parent compound LaFeAsO using angle resolved photoemission spectroscopy (ARPES). By comparing with a full-potential Linear Augmented PlaneWave calculation we show that the extra large Gamma hole pocket measured via ARPES comes from electronic structure at the sample surface. Based on this we discuss the strong polarization dependence of the band structure and a temperature-dependent hole-like band around the M point. The two phenomena give additional evidences for the existence of the surface-driven electronic structure.

Keywords

angle-resolved photoemission spectroscopy electronic structure surface science

Cite

@article{arxiv.1006.0929,
  title  = {Surface-driven electronic structure in LaFeAsO studied by angle resolved photoemission spectroscopy},
  author = {Chang Liu and Yongbin Lee and A. D. Palczewski and J. -Q. Yan and Takeshi Kondo and B. N. Harmon and R. W. McCallum and T. A. Lograsso and A. Kaminski},
  journal= {arXiv preprint arXiv:1006.0929},
  year   = {2015}
}

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6 pages, 6 figures

Surface-driven electronic structure in LaFeAsO studied by angle resolved photoemission spectroscopy

Abstract

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