Surface currents and slope selection in crystal growth
Abstract
We face the problem to determine the slope dependent current during the epitaxial growth process of a crystal surface. This current is proportional to delta=(p+) + (p-), where (p+/-) are the probabilities for an atom landing on a terrace to attach to the ascending (p+) or descending (p-) step. If the landing probability is spatially uniform, the current is proved to be proportional to the average (signed) distance traveled by an adatom before incorporation in the growing surface. The phenomenon of slope selection is determined by the vanishing of the asymmetry delta. We apply our results to the case of atoms feeling step edge barriers and downward funnelling, or step edge barriers and steering. In the general case, it is not correct to consider the slope dependent current j as a sum of separate contributions due to different mechanisms.
Cite
@article{arxiv.cond-mat/0601655,
title = {Surface currents and slope selection in crystal growth},
author = {Paolo Politi},
journal= {arXiv preprint arXiv:cond-mat/0601655},
year = {2007}
}
Comments
6 pages. The text has been strongly revised and Fig.1 has been changed. Accepted for publication in the "Comptes Rendus Physique"