We argue that supersymmetric transformation could be applied across the heterojunction formed by joining of two mixed semiconductors. A general framework is described by specifying the structure of ladder operators at the junction for making quantitative estimation of physical quantities. For a particular heterojunction device, we show that an exponential grading inside a nanoscale doped layer is amenable to exact analytical treatment for a class of potentials distorted by the junctions through the solutions of transformed Morse-Type potentials.
@article{arxiv.1002.2732,
title = {Supersymmetry Across Nanoscale Heterojunction},
author = {B. Bagchi and A. Ganguly and A. Sinha},
journal= {arXiv preprint arXiv:1002.2732},
year = {2015}
}