Superfluorescent emission in electrically pumped semiconductor laser
Abstract
We report superfluorescent (SF) emission in electrically pumped InGaN/InGaN QW lasers with saturable absorber. In particular, we observe a superlinear growth of the peak power of SF pulses with increasing amplitude of injected current pulses and attribute it to cooperative pairing of electron-hole (e-h) radiative recombinations. The phase transitions from amplified spontaneous emission to superfluorescence and then to lasing regime is confirmed by observing (i) abrupt peak power growth accompanied by spectral broadening, (ii) spectral shape with hyperbolic secant envelope and (iii) red shift of central wavelength of SF emission pulse. The observed red shift of SF emission is shown to be caused by the pairing of e-h pairs in an indirect cooperative X-transition.
Cite
@article{arxiv.1302.0263,
title = {Superfluorescent emission in electrically pumped semiconductor laser},
author = {D. L. Boiko and X. Zeng and T. Stadelmann and S. Grossmann and A. Hoogerwerf and T. Weig and U. T. Schwarz and L. Sulmoni and J. -M. Lamy and N. Grandjean},
journal= {arXiv preprint arXiv:1302.0263},
year = {2013}
}
Comments
18 pages, 7 figures