The electronic properties of ScPdGe and ScPdSi, crystallizing in the hexagonal ZrNiAl and orthorhombic TiNiSi structures, respectively, are investigated. ScPdGe and ScPdSi are found to show bulk superconductivity below 0.9 and 1.7 K, respectively, based on electrical resistivity and heat capacity data measured using synthesized polycrystalline samples. First principles calculations indicate the presence of large contributions of Sc 3d and Pd 4d electrons at the Fermi energy in both materials. The electronic properties and electronic states of these materials are discussed in comparison with those of several superconductors containing scandium and a 4d transition metal element.
@article{arxiv.2312.06045,
title = {Superconductivity in Ternary Germanide ScPdGe and Silicide ScPdSi},
author = {Yusaku Shinoda and Yoshihiko Okamoto and Youichi Yamakawa and Hiroshi Takatsu and Hiroshi Kageyama and Daigorou Hirai and Koshi Takenaka},
journal= {arXiv preprint arXiv:2312.06045},
year = {2023}
}
Comments
5 pages, 4 figures, accepted for publication in J. Phys. Soc. Jpn