The 3-layer (3R) polytype of TaSe2-xTex shows a superconducting transition temperature that is between 6 and 17 times higher than that of the two-layer (2H) polytype. The remarkable difference in Tc, although clearly associated with a difference in polytype, could have been due to an electronic effect specific to the Te-Se substitution. Here we report that small amounts of Mo or W doping lead to a 2H to 3R polytype transition in Ta1-xMoxSe2 and Ta1-xWxSe2. The 3R polytype materials are again found to have substantially higher Tcs (~ 2 K for Ta0.9W0.1Se2 and Ta0.9Mo0.1Se2) than the 2H material (0.15 K). This eliminates the possibility that any special characteristics of the Te/Se substitution are responsible for the dramatic difference in Tc, and instead shows that a three-layer stacking sequence is strongly preferred for superconductivity over a two-layer stacking sequence in the TaSe2 system.
@article{arxiv.1505.07336,
title = {Superconductivity in 3R-Ta1-xMxSe2 (M = W, Mo)},
author = {Huixia Luo and Weiwei Xie and Elizabeth M. Seibel and R. J. Cava},
journal= {arXiv preprint arXiv:1505.07336},
year = {2015}
}