Superconducting Diode Effect Sign Change in Epitaxial Al-InAs Josepshon Junctions
Abstract
There has recently been a surge of interest in studying the superconducting diode effect (SDE) partly due to the possibility of uncovering the intrinsic properties of a material system. A change of sign of the SDE at finite magnetic field has previously been attributed to different mechanisms. Here, we observe the SDE in epitaxial Al-InAs Josephson junctions with strong Rashba spin-orbit coupling (SOC). We show that this effect strongly depends on the orientation of the in-plane magnetic field. In the presence of a strong magnetic field, we observe a change of sign in the SDE. Simulation and measurement of supercurrent suggest that depending on the superconducting widths, , this sign change may not necessarily be related to 0-- or topological transitions. We find that the strongest sign change in junctions with narrow is consistent with SOC-induced asymmetry of the critical current under magnetic-field inversion, while in wider , the sign reversal could be related to 0-- transitions and topological superconductivity.
Keywords
Cite
@article{arxiv.2303.01902,
title = {Superconducting Diode Effect Sign Change in Epitaxial Al-InAs Josepshon Junctions},
author = {Neda Lotfizadeh and William F. Schiela and Barış Pekerten and Peng Yu and Bassel Heiba Elfeky and William Strickland and Alex Matos-Abiague and Javad Shabani},
journal= {arXiv preprint arXiv:2303.01902},
year = {2024}
}