English

Superconducting Diode Effect in Double Quantum Dot Device

Mesoscale and Nanoscale Physics 2025-05-21 v1

Abstract

Superconducting diode effect (SDE) is theoretically examined in double quantum dot coupled to three superconducting leads, LL, R1R1 and R2R2. Lead LL is commonly connected to two quantum dots (QD1, QD2) while lead R1R1 (R2R2) is connected to QD1 (QD2) only. The phase differences φ1\varphi_{1} between leads LL and R1R1 and φ2\varphi_{2} between leads LL and R2R2 are tuned independently. The critical current into lead R1R1 depends on its direction unless φ2=0\varphi_{2} = 0, π\pi, which is ascribable to the formation of Andreev molecule between the QDs. In the absence of electron-electron interaction UU in the QDs, the spectrum of the Andreev bound states forms Dirac cones in the φ1φ2\varphi_{1}-\varphi_{2} plane if the energy levels in the QDs are tuned to the Fermi level in the leads. The SDE is enhanced to almost 30\% when φ2\varphi_{2} is set to the value at the Dirac points. In the presence of UU, the SDE is still observed when UU is smaller than the superconducting energy gap in the leads. Our device should be one of the minimal models for the SDE since a similar device with a single QD does not show the SDE.

Keywords

Cite

@article{arxiv.2412.19969,
  title  = {Superconducting Diode Effect in Double Quantum Dot Device},
  author = {Go Takeuchi and Mikio Eto},
  journal= {arXiv preprint arXiv:2412.19969},
  year   = {2025}
}

Comments

24 pages, 10 figures

R2 v1 2026-06-28T20:50:23.145Z