English

Substrate-induced structures of bismuth adsorption on graphene: a first principle study

Materials Science 2016-08-24 v3

Abstract

The geometric and electronic properties of Bi-adsorbed monolayer graphene, enriched by the strong effect of substrate, are investigated by first-principles calculations. The six-layered substrate, corrugated buffer layer, and slightly deformed monolayer graphene are all simulated. Adatom arrangements are thoroughly studied by analyzing the ground-state energies, bismuth adsorption energies, and Bi-Bi interaction energies of different adatom heights, inter-adatom distance, adsorption sites, and hexagonal positions. A hexagonal array of Bi atoms is dominated by the interactions between the buffer layer and the monolayer graphene. An increase in temperature can overcome a 50\sim 50 meV energy barrier and induce triangular and rectangular nanoclusters. The most stable and metastable structures agree with the scanning tunneling microscopy measurements. The density of states exhibits a finite value at the Fermi level, a dip at 0.2\sim -0.2 eV, and a peak at 0.6\sim -0.6 eV, as observed in the experimental measurements of the tunneling conductance.

Keywords

Cite

@article{arxiv.1507.07670,
  title  = {Substrate-induced structures of bismuth adsorption on graphene: a first principle study},
  author = {S. Y. Lin and S. L. Chang and H. H. Chen and S. H. Su and J. C. A. Huang and M. -F. Lin},
  journal= {arXiv preprint arXiv:1507.07670},
  year   = {2016}
}
R2 v1 2026-06-22T10:20:12.252Z