English

Sub-2 Kelvin characterization of nitrogen-vacancy centers in silicon carbide nanopillars

Quantum Physics 2025-01-15 v4 Optics

Abstract

The development of efficient quantum communication technologies depends on the innovation in multiple layers of its implementation, a challenge we address from the fundamental properties of the physical system at the nano-scale to the instrumentation level at the macro-scale. We select a promising near infrared quantum emitter, the nitrogen-vacancy (NV) center in 4H-SiC, and integrate it, at an ensemble level, with nanopillar structures that enhance photon collection efficiency into an objective lens. Moreover, changes in collection efficiency in pillars compared to bulk can serve as indicators of color center orientation in the lattice. To characterize NV center properties at the unprecedented sub-2 Kelvin temperatures, we incorporate compatible superconducting nanowire single photon detectors inside the chamber of an optical cryostat and create the ICECAP, the Integrated Cryogenic system for Emission, Collection And Photon-detection. ICECAP measurements show no significant linewidth broadening of NV ensemble emission and up to 14-fold enhancement in collected emission. With additional filtering, we measure emitter lifetimes of NV centers in a basal (hkhk) and an axial (kkkk) orientation unveiling their cryogenic values of 2.2 ns and 2.8 ns.

Keywords

Cite

@article{arxiv.2401.10509,
  title  = {Sub-2 Kelvin characterization of nitrogen-vacancy centers in silicon carbide nanopillars},
  author = {Victoria A. Norman and Sridhar Majety and Alex H. Rubin and Pranta Saha and Nathan R. Gonzalez and Jeanette Simo and Bradi Palomarez and Liang Li and Pietra B. Curro and Scott Dhuey and Selven Virasawmy and Marina Radulaski},
  journal= {arXiv preprint arXiv:2401.10509},
  year   = {2025}
}