Strongly enhanced Berry dipole at topological phase transitions in BiTeI
Abstract
Transitions between topologically distinct electronic states have been predicted in different classes of materials and observed in some. A major goal is the identification of measurable properties that directly expose the topological nature of such transitions. Here we focus on the giant-Rashba material bismuth tellurium iodine (BiTeI) which exhibits a pressure-driven phase transition between topological and trivial insulators in three-dimensions. We demonstrate that this transition, which proceeds through an intermediate Weyl semi-metallic state, is accompanied by a giant enhancement of the Berry curvature dipole which can be probed in transport and optoelectronic experiments. From first-principles calculations, we show that the Berrry-dipole --a vector along the polar axis of this material-- has opposite orientations in the trivial and topological insulating phases and peaks at the insulator-to-Weyl critical points, at which the nonlinear Hall conductivity can increase by over two orders of magnitude.
Keywords
Cite
@article{arxiv.1805.02680,
title = {Strongly enhanced Berry dipole at topological phase transitions in BiTeI},
author = {Jorge I. Facio and Dmitri Efremov and Klaus Koepernik and Jhih-Shih You and Inti Sodemann and Jeroen van den Brink},
journal= {arXiv preprint arXiv:1805.02680},
year = {2018}
}
Comments
As accepted in PRL