Strong Interaction Effects at a Fermi Surface in a Model for Voltage-Biased Bilayer Graphene
Abstract
Monte Carlo simulation of a 2+1 dimensional model of voltage-biased bilayer graphene, consisting of relativistic fermions with chemical potential mu coupled to charged excitations with opposite sign on each layer, has exposed non-canonical scaling of bulk observables near a quantum critical point found at strong coupling. We present a calculation of the quasiparticle dispersion relation E(k) as a function of exciton source j in the same system, employing partially twisted boundary conditions to boost the number of available momentum modes. The Fermi momentum k_F and superfluid gap Delta are extracted in the limit j tends to zero for three different values of mu, and support a strongly interacting scenario at the Fermi surface with Delta of order O(mu). We propose an explanation for the observation mu < k_F in terms of a dynamical critical exponent z < 1.
Keywords
Cite
@article{arxiv.1509.03401,
title = {Strong Interaction Effects at a Fermi Surface in a Model for Voltage-Biased Bilayer Graphene},
author = {Wes Armour and Simon Hands and Costas Strouthos},
journal= {arXiv preprint arXiv:1509.03401},
year = {2015}
}
Comments
12 pages, 5 figures