There is an increasing interest in the electronic properties of few layer graphene as it offers a platform to study electronic interactions because the dispersion of bands can be tuned with number and stacking of layers in combination with electric field. However, electronic interaction becomes important only in very clean devices and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism (QHF) seen in ABA trilayer graphene (ABA-TLG). Due to high mobility ∼500,000 cm2V−1s−1 in our device compared to previous studies, we find all symmetry broken states and that Landau Level (LL) gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree-Fock (H-F) calculations. Moreover, we observe hysteresis as a function of filling factor (ν) and spikes in the longitudinal resistance which, together, signal the formation of QHF states at low magnetic field.
@article{arxiv.1610.00314,
title = {Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene},
author = {Biswajit Datta and Santanu Dey and Abhisek Samanta and Abhinandan Borah and Kenji Watanabe and Takashi Taniguchi and Rajdeep Sensarma and Mandar M. Deshmukh},
journal= {arXiv preprint arXiv:1610.00314},
year = {2017}
}