A large variability of carrier mobility of graphene-based field effect transistors hampers graphene science and technology. We determine the scattering strength of the dominant scatterer responsible for the variability of graphene-based transistors on silicon oxide. The strength of the scatterer is found to be more consistent with charged impurities than with resonant impurities.
@article{arxiv.1502.03043,
title = {Strength of the dominant scatterer in graphene on silicon oxide},
author = {Jyoti Katoch and Duy Le and Simranjeet Singh and Rahul Rao and Talat S. Rahman and Masa Ishigami},
journal= {arXiv preprint arXiv:1502.03043},
year = {2015}
}