The crystallographic orientation of anisotropic 2D materials plays a crucial role in their physical properties and device performance. However, standard orientation techniques such as transmission electron microscopy (TEM) or X-ray diffraction (XRD) can be complex and less accessible for routine characterization. In this study, we investigate the orientation of black phosphorus (BP) from bulk crystals to thin layers using angle-resolved polarized Raman spectroscopy (ARPRS) with a single-wavelength (514 nm) Raman setup. By incorporating thickness-dependent interference effects and anisotropic optical indices, this approach provides a reliable framework for orientation determination across different BP thicknesses. The method is validated through direct orientation measurements using TEM and Electron Backscattering Diffraction (EBSD), confirming its applicability to both thick and ultrathin samples. Given its simplicity and compatibility with widely available Raman setups, this approach offers a practical solution for characterizing BP orientation without requiring advanced structural characterization techniques.
@article{arxiv.2508.04142,
title = {Straightforward Method to Orient Black Phosphorus from Bulk to Thin Layers using a Standard Green Laser},
author = {Etienne Carré and Frédéric Fossard and Jean-Sébastien Mérot and Denis Boivin and Nicolas Horezan and Victor Zatko and Florian Godel and Bruno Dlubak and Marie-Blandine Martin and Pierre Seneor and Etienne Gaufres and Julien Barjon and Annick Loiseau and Ingrid Stenger},
journal= {arXiv preprint arXiv:2508.04142},
year = {2025}
}