English

Stacking-Dependent Magnetism in Bilayer CrI$_3$

Materials Science 2018-11-19 v2

Abstract

We report the connection between the stacking order and magnetic properties of bilayer CrI3_3 using first-principles calculations. We show that the stacking order defines the magnetic ground state. By changing the interlayer stacking order one can tune the interlayer exchange interaction between antiferromagnetic and ferromagnetic. To measure the predicted stacking-dependent magnetism, we propose using linear magnetoelectric effect. Our results not only gives a possible explanation for the observed antiferromagnetism in bilayer CrI3_3 but also have direct implications in heterostructures made of two-dimensional magnets.

Keywords

Cite

@article{arxiv.1808.06559,
  title  = {Stacking-Dependent Magnetism in Bilayer CrI$_3$},
  author = {Nikhil Sivadas and Satoshi Okamoto and Xiaodong Xu and Craig. J. Fennie and Di Xiao},
  journal= {arXiv preprint arXiv:1808.06559},
  year   = {2018}
}
R2 v1 2026-06-23T03:38:37.063Z