English

Split-gate device for indirect excitons

Mesoscale and Nanoscale Physics 2018-05-16 v1
Authors: C. J. Dorow , J. R. Leonard , M. M. Fogler , L. V. Butov , K. W. West , L. N. Pfeiffer
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Abstract

We present a concept and experimental proof of principle for split-gate devices for indirect excitons (IXs). The split-gate forms a narrow channel, a point contact, for IX current. Control of IX flow through the split-gate with both gate voltage and excitation power is demonstrated.

Cite

@article{arxiv.1801.01553,
  title  = {Split-gate device for indirect excitons},
  author = {C. J. Dorow and J. R. Leonard and M. M. Fogler and L. V. Butov and K. W. West and L. N. Pfeiffer},
  journal= {arXiv preprint arXiv:1801.01553},
  year   = {2018}
}

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