Layered transition-metal dichalcogenides (TMDs) family are gaining increasing importance due to their unique electronic band structures, promising interplay among light, valley (pseudospin), charge and spin degrees of freedom. They possess large intrinsic spin-orbit interaction which make them most relevant for the emerging field of spin-orbitronics. Here we report on the conversion of spin current to charge current in MoS2 monolayer. Using spin pumping from a ferromagnetic layer (10 nm of cobalt) we find that the spin to charge conversion is highly efficient. Analysis in the frame of the inverse Rashba-Edelstein (RE) effect yields a RE length in excess of 4 nm at room temperature. Furthermore, owing to the semiconducting nature of MoS2, it is found that back-gating allows electrical field control of the spin-relaxation rate of the MoS2-metallic stack.
@article{arxiv.1510.03451,
title = {Spin to charge conversion in MoS$_{2}$ monolayer with spin pumping},
author = {Cheng Cheng and Martin Collet and Juan-Carlos Rojas Sánchez and Viktoria Ivanovskaya and Bruno Dlubak and Pierre Seneor and Albert Fert and Hyun Kim and Gang Hee Han and Young Hee Lee and Heejun Yang and Abdelmadjid Anane},
journal= {arXiv preprint arXiv:1510.03451},
year = {2016}
}