Spin relaxation in a Rashba semiconductor in an electric field
Disordered Systems and Neural Networks
2009-11-10 v1
Abstract
The impact of an external electric field on the spin relaxation in a disordered two-dimensional electron system is studied within the framework of a field-theoretical formulation. Generalized Bloch-equations for the diffusion and the decay of an initial magnetization are obtained. The equations are applied to the investigation of spin relaxation processes in an electric field.
Cite
@article{arxiv.cond-mat/0403505,
title = {Spin relaxation in a Rashba semiconductor in an electric field},
author = {O. Bleibaum},
journal= {arXiv preprint arXiv:cond-mat/0403505},
year = {2009}
}
Comments
9 pages, 2 figures