Spin-dependent shot noise of inelastic transport through molecular quantum dots
Abstract
Here we present a theoretical analysis of the effect of inelastic electron scattering on spin-dependent transport characteristics (conductance, current-voltage dependence, magnetoresistance, shot noise spectrum, Fano factor) for magnetic nanojunction. Such device is composed of molecular quantum dot (with discrete energy levels)connected to ferromagnetic electrodes (treated within the wide-band approximation), where molecular vibrations are modeled as dispersionless phonons. Non-perturbative computational scheme, used in this work, is based on the Green's function theory within the framework of mapping technique (GFT-MT) which transforms the many-body electron-phonon interaction problem into a single-electron multi-channel scattering problem. The consequence of the localized electron-phonon coupling is polaron formation. It is shown that polaron shift and additional peaks in the transmission function completely change the shape of considered transport characteristics.
Keywords
Cite
@article{arxiv.cond-mat/0306174,
title = {Spin-dependent shot noise of inelastic transport through molecular quantum dots},
author = {Kamil Walczak},
journal= {arXiv preprint arXiv:cond-mat/0306174},
year = {2007}
}
Comments
13 pages, 5 figures