Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

D. Vu; H. F. Jurca; F. Maroun; P. Allongue; N. Tournerie; A. C. H. Rowe; D. Paget; S. Arscott; E. Peytavit

doi:10.1103/PhysRevB.83.121304

Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

Mesoscale and Nanoscale Physics 2015-05-19 v2 Materials Science

Authors: D. Vu , H. F. Jurca , F. Maroun , P. Allongue , N. Tournerie , A. C. H. Rowe , D. Paget , S. Arscott , E. Peytavit

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Abstract

The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches +/- 6% around zero applied tunnel bias and drops to +/- 2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ~ 0%.

Keywords

spin-dependent tunneling photoelectrons GaAs cobalt spin asymmetry light helicity surface recombination velocity

Cite

@article{arxiv.1008.1403,
  title  = {Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt},
  author = {D. Vu and H. F. Jurca and F. Maroun and P. Allongue and N. Tournerie and A. C. H. Rowe and D. Paget and S. Arscott and E. Peytavit},
  journal= {arXiv preprint arXiv:1008.1403},
  year   = {2015}
}

Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

Abstract

Keywords

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