Over the regime of the radiation-induced zero-resistance states and associated oscillatory magnetoresistance, we propose a low magnetic field analog of quantum-Hall-limit techniques for the electrical detection of electron spin- and nuclear magnetic- resonance, dynamical nuclear polarization via electron spin resonance, and electrical characterization of the nuclear spin polarization via the Overhauser shift. In addition, beats observed in the radiation-induced oscillatory-magnetoresistance are developed into a method to measure and control the zero-field spin splitting due to the Bychkov-Rashba and bulk inversion asymmetry terms in the high mobility GaAs/AlGaAs system.
@article{arxiv.cond-mat/0407143,
title = {Spin characterization and control over the regime of radiation-induced zero-resistance states},
author = {R. G. Mani},
journal= {arXiv preprint arXiv:cond-mat/0407143},
year = {2007}
}
Comments
IEEE Transactions in Nanotechnology (to be published); 10 pages, 10 color figures